Frequency-doubled GaAsSb/GaAs semiconductor disk laser emitting at 589 nm

We present the first frequency-doubled yellow emitting GaAsSb/GaAs semiconductor disk laser also referred to as VECSELs. Using a solid-source MBE, a GaAsSb-based semiconductor disk laser has been grown on GaAs. The laser cavity is formed by a Bragg mirror and an external dielectric mirror. Pumping of the GaAsSb quantum wells is done optically by a laser beam. A nonlinear crystal is placed inside the external cavity for frequency doubling. In continuous operation, we achieved a maximum second-harmonic output power of 15 mW at a pump power of 2.1 W. The yellow laser emission at 589 nm was well suitable for sodium absorption spectroscopy. Additionally, we have demonstrated the first semiconductor disk laser emitting in the infrared range 1080-1200 nm.