Chemical reactivity of the Si(100)(2 × 1)-K surface: electron energy loss spectroscopy and thermal desorption studies

Abstract The adsorbed states of K atoms on the Si(100)(2 × 1) surface and the interactions of the K-covered surface with several gases, i.e. H, O 2 , CO and HCOOH, have been studied mainly by the use of high-resolution electron energy loss spectroscopy (EELS) and thermal desorption spectroscopy (TDS). Experimental evidence is given for the existence of two chemisorbed states of K atoms on the Si(100)(2 × 1) surface. Two adsorbed states of O atoms were found on the Si(100)(2 × 1)-K surface. HCOO adspecies of an ioniccharacter exist on the Si(100)(2 × 1)-K surface.