Deposition of a-SiC:H, a-SiO{sub 2} and tetrahedral-C with programmable in-situ etching. Final performance report, March 1, 1988--November 30, 1991

This research program was originally defined to investigate the deposition of semiconductor and dielectric thin films using a low pressure remote plasma chemical vapor deposition system incorporating a process for etching the films. This etching was to be performed in a periodic fashion during the deposition process to remove defect regions in the film being deposited. The goal was to remove voids and other defects which are characteristic of low temperature deposition processes. While the original research proposal suggested that the studies include the amorphous alloys (Si/C):H and (Si/Ge):H, subsequent funding reductions limited the work to the deposition of an amorphous silicon alloy material (a-Si:H). Intrinsic and doped forms of these materials have applications in the fabrication of single and multi-junction thin film solar cells.