Semiconductor device including circuits having security function

This semiconductor device 100 is characterized in being provided with a front end and back ends A, B that includ a plurality of layers, circuits 22, 23, 24 having a security function being provided to(i) at least one layer, from among the plurality of layers of the back end B, in which the wiring pitch is 100 nm or greater, (ii) at least one layer, from among the plurality of layers of the back end B, corresponding to wiring layer M5 or higher (i.e., M5, M6, M7, ...), (iii) at least one layer, from among the plurality of layers of the back end B, in which there is no need to use immersion ArFexposure, or (iv) at least one layer, from among the plurality of layers of the back end B, exposed using an exposure wavelength equal to or greater than 200 nm.