Polyimide-based gate dielectrics for high-performance organic thin film transistors

In this work, polyimide-based novel polymer dielectric materials, containing a cross-linkable olefin group and a long alkyl chain with biphenyl, were designed and synthesized by a mild chemical synthesis method to avoid thermal imidization so that they can be widely utilized. The two novel polyimide materials show good thermal stability, pinhole-free dense film morphologies, low leakage current densities ( 5 × 105, and relatively low threshold voltage (10 and 3.6 V, respectively).