A Signal Source Chip at 140GHz and 160GHz for Radar Applications in a SiGe Bipolar Technology

In this paper, a monolithic signal source chip at 140GHz and 160 GHz including two VCOs, a dynamic divider and a static divider chain is presented. Two signal sources with these high fundamental frequencies are realized. All components have been designed using a 0.13µm 250GHz f T SiGe BiCMOS technology. The whole integrated circuit has a size of 930µm x 600µm including bondpads and consumes 210mA from a 3.3V and 130mA from a 1.8V supply. The oscillators cover a frequency range from 119.3–147.7GHz and 154.2–164GHz, which results in a tuning range of 28.4GHz and 9.8GHz. A output power of −0.9/3.6dBm with a best case phase noise of −111.2/−108dBc/Hz at 1MHz offset, measured at the divider output for PLL stabilization is achieved.