Optical band gap of Cd1−xMnxTe and Zn1−xMnxTe semiconductors

The dependence of the optical band gap for Zn1−xMnxTe and Cd1−xMnxTe semiconductor compounds was investigated by the methods of cathodoluminescence and optical reflection. It was found that, for Zn1−xMnxTe compounds in the region x≲0.2, the band gap is additionally broadened by a magnitude of about 0.08 eV, which is related to the high density of interstitial-type defects in single crystals. For x≳0.3, the probability of the existence of these defects decreases substantially, which is related to the distortion of tetrahedra of the crystal lattice of Zn1−xMnxTe by Mn atoms, which are incorporated into each tetrahedron.