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High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
2002
Koh Masahara
Tetsuo Takahashi
Mitsuhiro Kushibe
Takaya Ohno
Johji Nishio
Kazutoshi Kojima
Yuuki Ishida
Takaya Suzuki
Tomoyuki Tanaka
Sadafumi Yoshida
Kazuo Arai
Keywords:
Epitaxy
Metallurgy
Composite material
Materials science
Growth rate
high rate
hydrogen etching
Correction
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