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Black Silicon With Ultra-Low Surface Recombination Velocity Fabricated by Inductively Coupled Power Plasma
Black Silicon With Ultra-Low Surface Recombination Velocity Fabricated by Inductively Coupled Power Plasma
2019
Beniamino Iandolo
Adriana P. Sánchez Nery
Rasmus Schmidt Davidsen
Ole Hansen
Keywords:
Nuclear magnetic resonance
Plasma
Chemistry
Black silicon
Recombination
Reactive-ion etching
recombination velocity
Atomic physics
Condensed matter physics
Correction
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