Adsorption and decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on Si(001) studied by XPS, HREELS, and TPD

Abstract Adsorption and decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) have been studied using XPS, HREELS, and TPD. TEP is adsorbed molecularly on the Si(001) surface at RT and some of it is desorbed as a molecule between about 50 and 300°C. The other is decomposed and C 2 H 4 is evolved between about 150 and 500°C. For TBP, it is suggested to be partially dissociated at RT and C 4 H 8 is evolved between about 70 and 450°C. No carbon left on the surfaces is detected within the detection limit of AES after the TPD measurement for TEP and TBP. The decomposition mechanisms of TEP and TBP on the surface are proposed.