Old Web
English
Sign In
Acemap
>
Paper
>
Random telegraph noise in Hf-based MONOS nonvolatile memory with HfO 2 and HfON tunneling layer
Random telegraph noise in Hf-based MONOS nonvolatile memory with HfO 2 and HfON tunneling layer
2021
Jooyoung Pyo
Akio Ihara
Shun-ichiro Ohmi
Keywords:
Optoelectronics
Non-volatile memory
Noise
Quantum tunnelling
Materials science
layer
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]