Properties of narrow-bandgap (0.3–0.48 eV) A3B5 solid solution epilayers grown by metal-organic chemical vapor deposition

Processes of epitaxial growth of narrow-bandgap (with bandgap value E g ≈ 0.3−0.48 eV) solid solutions GaInAsSb and InAsPSb on InAs substrates by metal-organic chemical vapor deposition at low pressure (76 Torr) are investigated. It is shown that, under chosen growth conditions, the InAsPSb epilayers have high crystalline quality, while the solid solutions Ga1−x In x As y Sb1−y and InAs y P z Sb1 − y − z have compositions close to InAs (0.86 < x < 0.93, 0.62 < y < 0.9, 0.17 < z < 0.26) and manifest photoluminescence at room temperature.