CMOS 45‐nm 3D metal‐oxide‐metal capacitors for millimeter wave applications

Novel 3D metal-oxide-metal capacitors for 60 GHz applications in a CMOS 45 nm process are proposed. Relatively high capacitances density of 3 fF/μm2 and quality factors from 3.2 to 10.2 at 60 GHz are measured. The study is validated up to 110 GHz for different capacitance values. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26029