Plasma immersion ion implantation for shallow junctions in silicon

Low cost and low voltage (< 1 keV) Plasma Immersion Ion Implantation (PIII) for acceptor and donor doping was studied from RF plasmas of 1% PH 3 -H 2 and 1% B 2 H 6 -H 2 and gas mixtures, respectively. Conventional annealing and Rapid Thermal Processing (RTP) were applied for the activation of the dopants forming junction depths in 0.1-0.215 μm range. The level of the co-implanted metal concentration was determined by Rutherford Backscattering Spectrometry and Deep Level Transient Spectroscopy (DLTS) technique and found lower than 1 × 10 11 ion/cm 3 . The effects of PIII on the lifetime of carriers were followed by lifetime mapping. The lifetime degradation caused by PIII of medium duration was comparable with the effect of conventional doping processes.