II-VI quantum confined Stark effect waveguide modulators

Quantum confined Stark effect p‐i‐n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro‐optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration.