Hopping conduction via the excited states of boron in p-type diamond

Abstract We report the first observation of the three types of conduction in boron-doped homoepitaxial diamond. The first is the conduction in the valence band. The second is hopping conduction via excited states of the impurity boron, which is located 0.06 eV above the valence band. The third is the conduction in excited state of the impurity, and this state merges into the impurity band when the impurity concentration is increased. The impurity band is located 0.05 eV above the valence band. These three conduction mechanisms produce the activation energies of e 1 , e 2 and e 3 , respectively.