Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation

Abstract In contrast to irradiated Si, the information on removal rates of charge carriers in irradiated SiC is meager and often contradictory. This is due to serious difficulties in crystal growth which, in turn, may have a profound effect on properties of initial materials. In the present work we compare the influence of electron (≈1 MeV) and proton (8, 15 MeV) irradiation on float-zone Si (FZ-Si) and 4H-SiC (CVD). Electrical measurements were carried out with the help of the Van der Pauw technique and capacitance−voltage technique at 1 kHz for FZ-Si and SiC, correspondingly.