Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles

Abstract Current-voltage ( I - V ) properties of indium-tin-oxide/Ag nanoparticles embedded in polyurethane film/Al devices exhibited a current bistability with ON/OFF ratio within the range of 10 5 –10 3 with the variation of voltage from −0.85 to 3.95 V, which was nearly 10 2 larger than that for the device without Ag nanoparticles. The memory margin was obviously enlarged due to the existence of the Ag nanoparticles embedded in the polyurethane layer. I - V properties and write-read-erase-read voltage cycles test indicated the flash resistive switching properties. The data retention time reach up to 1.8 × 10 4  s, which manifested the stability of the memory devices. I - V property at ON state was attributed to the drift mechanism, and the property at OFF state was related to the space-charge-limited-current behaviors.