Method with polysilicon removal by dry etching in exchange Gates

A method comprising: Forming a dummy gate electrode on a substrate, wherein the dummy gate electrode having a nitride cap; forming spacers adjacent to opposing sides of the dummy gate electrode, thereby forming a gate trench is formed; then Dry etching the nitride cap; followed by Chamfering upper edges of the gate trench; then Executing a selective dry etching process at a part of the dummy gate electrode; and subsequently Wet etching the remainder of the dummy gate electrode.