Light emitting device and manufacturing method thereof

A light emitting device comprising a cladding layer of a first conductivity type III-V group nitride system semiconductor containing In is formed by III-V group nitride semiconductor on the first conductivity type cladding layer has source layer, the covering layer is formed by III-V group nitride semiconductor formed on the active layer, and forming a second conductivity type cladding layer by a III-V group nitride semiconductor formed on the cover layer. The cover layer is to inhibit the loss of indium from the active layer layer.