PHOTOLUMINESCENCE STUDIES OF CHEMICAL ADSORPTION OF GAAS/ALXGA1-XAS MULTIQUANTUM WELL SEMICONDUCTOR
1995
Adsorption of ferrocene and p-methylnitrobenzene on a GaAs/AlxGa1 –xAs multiquantum well semiconductor is characterized by the changes in the photoluminescent response in terms of the interactions of adsorbed molecules with surface states.
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