Old Web
English
Sign In
Acemap
>
Paper
>
Device Characteristics of Nano Scale Junctionless Accumulation Mode FET (JAM-FET) with Localized Anti-channel Doping
Device Characteristics of Nano Scale Junctionless Accumulation Mode FET (JAM-FET) with Localized Anti-channel Doping
2018
C.-L. Lin
J.D. Lee
Y.-J Lee
Y. J. Lu
W K Yeh
T. K. Kang
P.C. Juan
Y. Z. Zhu
T. Y. Lin
Keywords:
Optoelectronics
Communication channel
Doping
Materials science
Nanoscopic scale
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]