High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Stretchable resistive memories were created using donor–acceptor rod-coil diblock copolymers, poly(polyfluorene)-b-poly(pendent isoindigo), with different block ratios. Reliable and reproducible electrical characteristics of volatile SRAM- and nonvolatile WORM-type memories were exhibited under applied tensile strains ranging from 0 to 50 %, demonstrating the potential to serve as promising candidates for high-performance wearable devices.