Vertically integrated ZnO-Based 1D1R structure for resistive switching

We report a ZnO-based 1D1R structure, which is formed by a vertical integration of a FeZnO/MgO switching resistor (1R) and an Ag/MgZnO Schottky diode (1D). The multifunctional ZnO and its compounds are grown through MOCVD with in situ doping. For the R element, the current ratio of the high-resistance state (HRS) over the low-resistance state (LRS) at 1 V is 2.4 × 106. The conduction mechanisms of the HRS and LRS are Poole–Frenkel emission and resistive conduction, respectively. The D element shows the forward/reverse current ratio at ±1 V to be 2.4 × 107. This 1D1R structure exhibits high RHRS/RLRS ratio, excellent rectifying characteristics and robust retention.