Great improvement in IGBT turn-on characteristics with Trench Oxide PiN Schottky (TOPS) diode

Experimental results of the IGBT turn-on characteristics using 1200 V/50 A Trench Oxide PiN Schottky (TOPS) diode as the free wheeling diode are described. Compared to the conventional PiN diode, the TOPS diode showed an approximately 25% reduction in the turn-on loss of the IGBT. A reduction of 40% in the peak collector current of the IGBT has been achieved which results in a substantial suppression in the noise emission.