Production method of LED (Light Emitting Diode) for improving light extraction efficiency

A production method of an LED (Light Emitting Diode) for improving the light extraction efficiency comprises producing a single layer of closely arranged polystyrene balls on a P type gallium nitride layer which is arranged on the upper surface of a gallium nitride LED epitaxial wafer which comprises a sapphire substrate; arranging silicon dioxide gel in gaps of the polystyrene balls; performing high temperature heating to form a silicon dioxide bowl array; enabling photoresist to cover part of the silicon dioxide bowl array to be protected; removing unprotected silicon dioxide completely and removing the photoresist through a film removing agent; performing reflective metal film evaporation on the surfaces of the rest of the silicon dioxide bowl array and the P type gallium nitride layer and selecting an acid copper sulfate electroplating solution to electroplate metallic copper on the upper surface of a conductive film; removing the sapphire substrate which is arranged in the epitaxial wafer by a laser lift-off technology and enabling the surface of an N type gallium nitride layer which is on the other side of the P type gallium nitride layer to be exposed out; depositing a metal film on the surface of the N type gallium nitride layer by a photoetching technology, an electron beam evaporation technology and a metal lift-off technology to serve as an N electrode and achieving the production, wherein the position of the N electrode is corresponding to the silicon dioxide bowl array below.