Microwave preparation method of silicon carbide nano wire

The invention provides a microwave preparation method of a silicon carbide nano wire. The method comprises the following steps: providing a silicon-containing chip and placing it in a microwave reaction chamber; carrying out vacuum-pumping on the microwave reaction chamber and introducing protective gas; heating the reaction chamber to 1000-1300 DEG C by microwave, introducing carbon source gas and protective gas to the reaction chamber, carrying out reactions on the carbon source gas to form a silicon carbide nano wire on the silicon-containing chip. The microwave preparation method of the silicon carbide nano wire employs a microwave heating method to prepare SiC nano wire in situ; the method requires no synthetic technology in advance, no addition of catalyst, so as to simplify technology and lower production costs. In addition, the microwave heating technology has advantages of rapid heating speed, high efficiency, low energy consumption, short production period and further reduced preparation cost.