Process-induced charging damage in IGZO nTFTs

In this work, charging damage induced by processing in 300mm FAB on Indium-Gallium-Zinc-Oxide (IGZO) n-type Thin Film Transistors (TFT) is investigated using antennae connected at different levels. A compounded degradation due to two different mechanisms is revealed. Plasma etch damage is found to degrade the gate oxide leakage and reliability, while CMP-related charging affects the conductivity of the extension regions of the transistor.