Comparative collector design in InGaAs and GaAsSb based InP DHBTs

In this paper we compare the base-collector transit time of GaAsSb- and InGaAs-based double heterojunction bipolar transistors (DHBT) at low and high collector current. Using a ldquotype IIrdquo base-collector heterostructure leads to a simpler design to increase the operating current range of the devices.