Development and characterization of electrochemically enlarged silicon electrodes for energy storage microcapacitors

2008 
Focused on the development of high capacitance silicon-based devices, an optimized anodization method has been carried out in order to obtain electrodes with a greatly enlarged area. This constitutes a first structural condition to maximize the charge storage density of the capacitor. According to this purpose, the macropore formation on P and N type substrates has been analyzed and contrasted. For this task, the deposition parameters of a transparent Indium Tin Oxide (ITO) layer on N-type silicon have been established to ensure a conductive ohmic contact. Furthermore, the crystalline structure and transparency of the film have been demonstrated. This allows an efficient electron-hole generation by illuminating the back side of the wafer. Referring the P-type substrates, the effect of the applied current density in the superficial porosity and the macropore formation rate has been measured. A subsequent doping process of the macroporous structure by the use of a planar diffusion source has been performed to guarantee its low series resistance. In order to demonstrate the feasibility and mechanical robustness of the intended capacitance structure, a dielectric layer and a top electrode layer have been deposited. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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