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A study of gate metal structure for InAlN/AlN/GaN HEMTs
A study of gate metal structure for InAlN/AlN/GaN HEMTs
2017
Yoshimi Yamashita
Issei Watanabe
Akira Endoh
Akifumi Kasamatsu
Takashi Mimura
Keywords:
High-electron-mobility transistor
Analytical chemistry
Metal
Materials science
Optoelectronics
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