Joining Silicon Carbide Plates by Titanium Disilicide-Based Compound
2014
The present work is part of the Fourth Generation Reactor Program, which describes the methodology and results for joining SiC substrates by metallic silicides with SiC powder reinforcements. The severest temperatures in service are in the range of 1000 °C but short-time incursions at 1600 or 2000 °C have to be anticipated. One of the key issues is the joining of SiC f /SiC m composites to seal the combustible cladding. We describe the results for joining SiC substrates in liquid state using TiSi 2 . Joint integrity and joint strength can be improved by adding small SiC particles to the silicides powders. The assemblies are obtained in an inductive furnace. Cross-sections of the assembly, wettability tests, thermo-mechanical properties, and four-point bending tests are presented.
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