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Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices
Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices
2020
Pramod J. Patil
Computational Electronics
Namita A. Ahir
Suhas D. Yadav
Chetan C. Revadekar
Kishorkumar V. Khot
Rajanish K. Kamat
Tukaram D. Dongale
Deok-kee Kim
Keywords:
Materials science
conductive filament
Optoelectronics
Resistive random-access memory
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