Old Web
English
Sign In
Acemap
>
Paper
>
Interfacial layers of high-barrier Schottky diode of Al/n-type (100)Si exposed to H[2] plasma
Interfacial layers of high-barrier Schottky diode of Al/n-type (100)Si exposed to H[2] plasma
1993
hiroaki iwakuro
Keywords:
Radiochemistry
Materials science
Plasma
Schottky diode
Ceramic materials
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]