Electrical and patterning properties of direct nanoimprinted indium oxide (In2O3) and indium tin oxide (ITO)

The electrical and patterning properties of direct imprinted indium oxide (In2O3) and indium tin oxide (ITO) precursor gel films have been studied. The electrical properties of the imprinted films have also been compared with the electrical properties of non-imprinted films. In2O3 and ITO have almost the same type of solutes in solution but In2O3 shows better patterns than ITO, that is, the addition of tin to In2O3 causes the patterns to degrade because ITO has a lower tan δ during viscoelastic measurements than In2O3. In addition, the electrical properties (i.e. Hall mobility and carrier concentration) of In2O3 were affected by the direct imprinting process while the effects were not pronounced for ITO films.