Investigation of optical properties of In(Ga)As/GaAs mesa structures with active region based on quantum wells, quantum dots, and quantum well-dots

In this work photoluminescence (PL) of mesa-structures that contain three different types of active regions based on InGaAs/GaAs quantum wells (QWs), InAs/InGaAs/GaAs quantum dots (QDs) and InGaAs/GaAs quantum well-dots(QWD) is studied. Comparative analysis of the PL intensity obtained at different temperatures and optical excitation powers on mesa diameter is done.