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Acemap > Paper > Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures

Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures

2015 
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