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Effect of substrate rotation on silicon epitaxial growth rate in minimal CVD reactor
Effect of substrate rotation on silicon epitaxial growth rate in minimal CVD reactor
2017
Miya Matsuo
Mitsuko Muroi
Ning Li
Hitoshi Habuka
Takanori Mikahara
Shin-Ichi Ikeda
Yuuki Ishida
Shiro Hara
Keywords:
Materials science
Optoelectronics
Silicon
Epitaxy
Substrate (chemistry)
Correction
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