Photorefractivity of indium oxide (InOx) using 193nm excimer laser radiation

Indium oxide (InOx) is being extensively used in microelectronic technology due to its important optical and electrical properties. Dynamic photorefractive behaviour of InOx exposed in the near UV region (325nm) at low intensity (~0.25W/cm) has been demonstrated for films grown by DC magnetron sputtering and Pulsed Laser Deposition.