TDPAC studies on 181 Hf implanted into diamond

181Hf ions were implanted at (900±10)K into (100) cleaved single crystal diamonds. After subsequent annealing residence site parameters were determined for the implanted ions employing the γ(133 keV)−γ(482 keV) cascade in181Ta in TDPAC technique. Fractions of 5% each were determined that experience axially symmetric electric field gradients (EFG) Vzz(1)=5.5×1017 V cm−2 and Vzz(2)=9.6×1017 V cm−2, respectively. The bulk of the ions are strongly disturbed by still higher electric field gradients.