Study on effect of different temperatures on imaging performance of EBAPS devices

In view of the attenuation of performance index of self-developed EBAPS detector principle sample with the increase of working time and working temperature, a test method is designed from the angle of dark current noise and working temperature change, and the corresponding relationship between dark current and working temperature of EBAPS device is tested. Because EBAPS detector combines the characteristics of solid-state and vacuum micro-optical devices, it inherits the characteristics of dark current of CMOS chip changing with temperature. With the increase of temperature, dark current of CMOS chip increases rapidly. The rise of dark current will directly affect the equivalent background illumination of EBAPS detector. If the effective signal received by the detector is lower than the dark current noise signal at low illumination, that is, the effective signal is lower than the equivalent background illumination; the effective signal will be obscured in the noise signal, leading to the detector not working properly. In view of the characteristics of EBAPS detector, the test and calculation are also carried out. The data relations and change curves between the operating temperature, dark current and equivalent background illumination of EBAPS device are given. At the end of the paper, methods and ways to optimize the imaging performance of EBAPS detectors are presented, such as image processing algorithm, reducing the power consumption of readout circuit, and optimizing the dark current suppression process of EBAPS devices.