Enhanced photon absorption of Ge-on-Si avalanche photodiode with photon-trapping microstructure
2021
Ge-on-Si avalanche photodiodes with photon-trapping microstructure are designed and demonstrated to enhance the optical absorption. The responsivity is enhanced by 9-20% at the wavelength of 1,500-1,550 nm at -6V with the photon-trapping structures.
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