Improved Modeling of LDMOS with Non-Uniform Lateral Channel Doping

This paper presents an improved modeling method for LDMOS with non-uniform lateral channel doping in three aspects: more accurate DC modeling from a new Vds scaling technique that accounts for the difference in threshold voltage between the source and the drain from non-uniform lateral doping; elimination of spikes in capacitances by clamping the internal drain voltage when the drift region is depleted; and a new avalanche current model for the drift region that accounts for the Kirk effect.