Absorption Coefficient Of N-Type Hg 1-x Cd x Te Samples

In this paper, we've studied the effects of exciton absorption and the Burstain-Moss shift on the absorption above the energy gap of n-type direct semiconductors and derived a more common expression of absorption. In addition, we've discussed the reasons why the absorption peaks of exciton in HgCdTe haven't been observed in experiments. We also have calculated the absorption coefficient of the free carrier in n-type HgCdTe samples by assuming the four processes of electron transition in the conduction band are independent to each other.