Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application

This paper describes the analysis of linear performance of PAE 50% for wide band CDMA (W-CDMA) with a new structure FET "Self aligned gate PHEMT (Saga-PHEMT)" which was fabricated in 0.8 /spl mu/m WNx-gate self aligned structure on epitaxial layers. We obtained relations between ACPR and AM-AM/AM-PM conversions as follows; the ACPR is mainly controlled with the AM-AM conversion, and the phase-delay of the AM-PM conversion functions effectively as prevention of ACPR deteriorations which are caused by nonlinear AM-AM conversion.