Low-Threshold Amplification of Spontaneous Emission from AgInS2 Quantum Dots

Recently, solution-processed conventional I-III-VI2 quantum dots (QDs) demonstrated potential optical amplification application based on superior optical properties. Nonetheless, exploiting the potential of this kind of material as gain medium for optical amplification device is still scarce, rendering application prospect restricted. Herein, we report the amplified spontaneous emission (ASE) action by using AgInS2 (AIS) QDs as the gain medium for the first time. The ASE with ultra-low threshold (31.58 W cm-2) have been demonstrated through combining highly reflective distributed Bragg reflectors (DBR) with AIS QDs. Furthermore, the relationship between the number of layers of the DBR mirrors and the ASE performance is systematically discussed, indicating the seven-layer DBR is desirable device structure with the best ASE from AIS QDs. These consequences unambiguously uncover significant feasibility of the traditional AIS QDs as photonic resource, simultaneously demonstrating the as-designed devices have huge potential and promising applications for optical amplification