Reliability of GaN-Based Power Devices

No new product is possible without reliability: this is especially true for new and emerging technology, such as gallium nitride-based devices. For GaN power transistors, breakdown mechanisms play a significant role. The reduction of the robustness and of the long-term reliability still represents a serious issue that must be taken into consideration. The first part of the chapter deals with the above mentioned aspects and mainly focuses on the permanent degradation induced in GaN-based devices by off-state time-dependent mechanisms.