Molecular beam epitaxy grown PbSnTe buried quantum-well diode lasers with PbEuSeTe confinement layers
1991
Summary form only given. Buried quantum-well (BQW) lasers were fabricated in a two-stage MBE growth sequence. The first growth stage included a 1.3- mu m-thick p-PbTe:Tl buffer grown on top of a p-type
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