A method of forming a semiconductor integrated circuit device

Method of forming a semiconductor integrated circuit device, with the steps: (A) providing (S1) a semiconductor material region (20) having a first semiconductor circuit region (31) and a second semiconductor circuit region (32) which are formed in the semiconductor material region (20) and covered with an intermediate oxide layer (ZWOX, 40), wherein Intermediate oxide layer (ZWOX, 40) contact structures (42) or recesses (42) are formed, which extend to first contact points (33) of the first and to second contact points (34) of the second semiconductor circuit region (31, 32), (B) forming (S2) a first metallization layer (50) of a first metal material (53) such that at least the contact structures (42) or recesses (42) filled, the first contact points (33) of the first semiconductor circuit region (31) to the first Metallization layer (50) with first contacts (51) connected, the second contact points (34) of the second semiconductor circuit region (32) connected to the first metallization with second contacts (52) and in the region and above the first semiconductor circuit region (31) metallization regions for wiring ( 55) are formed, (C) forming (S3) ...