Insulated gate bipolar transistor (IGBT) driving and protection circuit

The utility model relates to an insulated gate bipolar transistor (IGBT) driving and protection circuit, which is applied to the driving and protection of an IGBT in an inverter circuit as well as the overload protection of the inverter circuit. The IGBT driving and protection circuit comprises a detection signal output unit, a signal processing unit and an IGBT driving and protection unit, wherein the output end of the detection signal output unit is connected with the input end of the signal processing unit; and the output end of the signal processing unit is connected with the input end of the IGBT driving and protection unit. The IGBT driving and protection circuit is simply structured and convenient to use, can judge overload properties for processing under the condition of no change in the capacity of conventional power equipment, and maximally avoids loss caused by the frequent power-off protection of the power equipment.